ATP602
μ s
0 μ
10
9
8
VDS=200V
ID=5A
VGS -- Qg
3
2
10
7
5
IDP=15A (PW≤10μs)
ID=5A
ASO
10
10
s
7
3
2
6
5
4
3
2
1
1.0
7
5
3
2
0.1
7
5
3
2
Operation in
this area is
limited by RDS(on).
Tc=25 ° C
Single pulse
1.0
0
0
2
4
6
8
10
12
14
16
0.01
2 3 5
7 10
2
3
5
7 100
2
3
5
7 1000
80
Total Gate Charge, Qg -- nC
PD -- Tc
IT14908
120
Drain-to-Source Voltage, VDS -- V
EAS -- Ta
IT16934
70
60
50
40
30
20
10
100
80
60
40
20
0
0
20
40
60
80
100
120
140
160
0
0
25
50
75
100
125
150
175
Case Temperature, Tc -- ° C
IT14910
Ambient Temperature, Ta -- ° C
IT10478
No. A1543-4/7
相关PDF资料
ATP613-TL-H MOSFET N-CH 500V 5.5A ATPAK
ATR2820-PNQG 83 IC TXRX WDCT 5.8GHZ L IF 32VQFN
ATR4256-TKSY IC FREQ SYNTH RADIO TUNER 20SSOP
ATR4258-ILQH 19 IC RCVR AM/FM 3WIRE BUS 44SSOP
ATR7040-PVQG IC PWR AMP 5.8GHZ WDCT 16-QFN
ATREB232ED-EK AT86RF232 EVAL KIT
ATZB-900-B0 KIT MOD 802.15.4/ZIGB 900MHZ RF
AUIRF7640S2TR1 MOSFET N-CH 60V 77A DIRECTFET-S2
相关代理商/技术参数
ATP613 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications
ATP613_11 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP613_12 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications
ATP613-TL-H 功能描述:MOSFET N-CH 500V 5.5A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds(最大)@ Id, Vgs @ 25° C:180 毫欧 @ 9A,10V Id 时的 Vgs(th)(最大):4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
ATP64A 制造商:COOPER B-LINE 功能描述:FAN TRAY 2 600 CABINET 230V
ATP64A 制造商:COOPER 功能描述:FAN TRAY 2 600 CABINET 230V
ATP68D-01CGM 制造商:AAC 制造商全称:American Accurate Components, Inc. 功能描述:RF POWER ATTENUATOR
ATP68D-01DGM 制造商:AAC 制造商全称:American Accurate Components, Inc. 功能描述:RF POWER ATTENUATOR